Transistor de poder del Mosfet

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China Multi Functional Mosfet Power Transistor Halogen - Free Devices Available en venta

Multi Functional Mosfet Power Transistor Halogen - Free Devices Available

Precio: Negotiated
MOQ: Negotiation
El tiempo de entrega: 1 - 2 Weeks
Marca: Hua Xuan Yang
Ver más Mosfet Power Transistor Description The Power MOSFET is a type of MOSFET. The operating principle of power MOSFET is similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the po... Ver más
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China Conductor de alto voltaje original Using Transistor del Mosfet del transistor de poder del Mosfet en venta

Conductor de alto voltaje original Using Transistor del Mosfet del transistor de poder del Mosfet

Precio: Negotiated
MOQ: Negotiation
El tiempo de entrega: 1 - 2 Weeks
Marca: OTOMO
Ver más Original High Voltage Mosfet Transistor , Mosfet Driver Using Transistor High Voltage Mosfet Transistor Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the ... Ver más
China Carga baja dual de la puerta del transistor de poder del Mosfet del canal N 8H02ETS 20V en venta

Carga baja dual de la puerta del transistor de poder del Mosfet del canal N 8H02ETS 20V

Precio: Negotiated
MOQ: 1000-2000 PCS
El tiempo de entrega: 1 - 2 Weeks
Marca: OTOMO
Ver más 20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) &l... Ver más
China Low Gate Charge Mosfet Power Transistor For Inverter Systems Management en venta

Low Gate Charge Mosfet Power Transistor For Inverter Systems Management

Precio: Negotiated
MOQ: Negotiation
El tiempo de entrega: 1 - 2 Weeks
Marca: Hua Xuan Yang
Ver más What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- ... Ver más
China N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A en venta

N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

Precio: Negotiated
MOQ: Negotiation
El tiempo de entrega: 1 - 2 Weeks
Marca: Hua Xuan Yang
Ver más N Channel Mos Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Fiel... Ver más
China Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor en venta

Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor

Precio: Negotiated
MOQ: Negotiation
El tiempo de entrega: 1 - 2 Weeks
Marca: Hua Xuan Yang
Ver más Mos Field Effect Transistor Description Mos Field Effect Transistor are used in many power supply and general power applications, especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P ... Ver más
China High Performance Mosfet Power Transistor With Extreme High Cell Density en venta

High Performance Mosfet Power Transistor With Extreme High Cell Density

Precio: Negotiated
MOQ: Negotiation
El tiempo de entrega: 1 - 2 Weeks
Marca: Hua Xuan Yang
Ver más Highest Performance Mosfet Power Transistor With Extreme High Cell Density Mosfet Power Transistor Feature Description It is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteri... Ver más
China High Performance Mosfet Power Transistor With Extreme High Cell Density en venta

High Performance Mosfet Power Transistor With Extreme High Cell Density

Precio: Negotiated
MOQ: Negotiation
El tiempo de entrega: 1 - 2 Weeks
Marca: Hua Xuan Yang
Ver más General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of R DS(ON) and C rss .In addition, switching behavior is well controlled with a ... Ver más
China OEM High Frequency Switching Transistor , Power Switch Transistor -30V -70A en venta

OEM High Frequency Switching Transistor , Power Switch Transistor -30V -70A

Precio: Negotiated
MOQ: Negotiation
El tiempo de entrega: 1 - 2 Weeks
Marca: Hua Xuan Yang
Ver más General Description The AOD403/AOI403 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. Parameters Part Number Status ... Ver más
China High Voltage Switching Mosfet Power Transistor With High Thermal Resistance en venta

High Voltage Switching Mosfet Power Transistor With High Thermal Resistance

Precio: Negotiated
MOQ: Negotiation
El tiempo de entrega: 1 - 2 Weeks
Marca: Hua Xuan Yang
Ver más General Description The AOD407 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free* Parameters ... Ver más
China Durable High Speed Power Switching Transistor , Power Darlington Transistor en venta

Durable High Speed Power Switching Transistor , Power Darlington Transistor

Precio: Negotiated
MOQ: Negotiation
El tiempo de entrega: 1 - 2 Weeks
Marca: Hua Xuan Yang
Ver más General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Low Gate Charge • Optimized for fast-switching applications Application Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications Parameters Part Number Status Package Polarity VDS (V) VGS (... Ver más
China High Switching Speed Mosfet Power Transistor For Linear Power Supplies en venta

High Switching Speed Mosfet Power Transistor For Linear Power Supplies

Precio: Negotiated
MOQ: Negotiation
El tiempo de entrega: 1 - 2 Weeks
Marca: Hua Xuan Yang
Ver más High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • Industrial and Motor Drive applications Parameters Part Number Status Package Polarity VDS... Ver más
China 6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection en venta

6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection

Precio: Negotiated
MOQ: Negotiation
El tiempo de entrega: 1 - 2 Weeks
Marca: Hua Xuan Yang
Ver más General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID = 6A RDS(ON) < 2... Ver más
China MCU 32-Bit M3  LQFP-64 STM32F103RCT6 Applied to the printer control panel en venta

MCU 32-Bit M3 LQFP-64 STM32F103RCT6 Applied to the printer control panel

Precio: Negotiable
MOQ: 960
El tiempo de entrega: 5-15days
Marca: OTOMO
Ver más MCU 32-Bit M3 LQFP-64 STM32F103RCT6 Applied to the printer control panel32-Bit FLASH ARM® Cortex®-M3 72MHz 2V ~ 3.6V LQFP-64_10x10x05P ST Microelectronics RoHS Ver más
China Tipo dual de gran intensidad alto rendimiento del transistor de poder del Mosfet N en venta

Tipo dual de gran intensidad alto rendimiento del transistor de poder del Mosfet N

Precio: Negotiated
MOQ: 1000-2000 PCS
El tiempo de entrega: 1 - 2 Weeks
Marca: OTOMO
Ver más HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary Absolute Maximum Ratings T =25°C unless otherwise noted Electric... Ver más
China corriente continua del dren del canal N dual del transistor de poder del Mosfet de 6.5A 30V en venta

corriente continua del dren del canal N dual del transistor de poder del Mosfet de 6.5A 30V

Precio: Negotiated
MOQ: 1000-2000 PCS
El tiempo de entrega: 1 - 2 Weeks
Marca: OTOMO
Ver más HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary Absolute Maximum Ratings T =25°C unless otherwise noted Electr... Ver más
China Interruptor del Mosfet de la lógica de HXY9926A, canal N dual del interruptor del Mosfet ±1.2v VGS en venta

Interruptor del Mosfet de la lógica de HXY9926A, canal N dual del interruptor del Mosfet ±1.2v VGS

Precio: Negotiated
MOQ: 1000-2000 PCS
El tiempo de entrega: 1 - 2 Weeks
Marca: OTOMO
Ver más HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-direction... Ver más
China MOSFETS duales del transistor de poder del Mosfet del canal N de RoHS SOT-23-6L 6,0 un VDSS en venta

MOSFETS duales del transistor de poder del Mosfet del canal N de RoHS SOT-23-6L 6,0 un VDSS

Precio: Negotiated
MOQ: 1000-2000 PCS
El tiempo de entrega: 1 - 2 Weeks
Marca: OTOMO
Ver más 8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and C... Ver más